The prospects of non-volatile phase-change RAM

被引：0
|
作者：
Kinam Kim
Gitae Jeong
机构：
[1] Samsung Electronics Co. Ltd,Advanced Technology Development Team, Memory Division
来源：
Microsystem Technologies | 2007年 / 13卷
关键词：
Current Pulse; Technical Challenge; Flash Memory; Driving Current; Thermal Isolation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.
引用
收藏
页码：145 / 147
页数：2
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