Annealing Behavior of Aluminum Implanted Germanium

被引：0

作者：

Onoda, Hiroshi ^{[1
]}

Nakashima, Yoshiki ^{[1
]}

Nagayama, Tsutomu ^{[1
]}

Sakai, Shigeki ^{[1
]}

Joshi, Abhijeet ^{[2
]}

Zaima, Shigeaki ^{[3
]}

机构：

[1] Nissin Ion Equipment Co Ltd, Shimogyo Ku, 575 Kuze Tonoshiro, Kyoto 6018205, Japan

[2] Act Layer Parametr Inc, 417 1-2 Veteran Ave, Los Angeles, CA 90024 USA

[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

来源：

2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) | 2016年

关键词：

Germanium; Donor impurity; Acceptor impurity; Aluminum; Phosphorus; Ion implantation; Diffusion; Activation; Carriers; DIFFUSION; GE; ANTIMONY; ACTIVATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Donor and acceptor impurities mainly focused on aluminum and phosphorus implanted Germanium has been characterized in terms of mainly diffusion behaviors and carrier activations. Among Group III elements, aluminum implanted sample shows shallower junction and lower sheet resistance. No diffusion occurs under annealing conditions performed in the experiment (up to RTA 700 degrees C 30sec). The co-existence of acceptor and donor impurities influences the diffusion and activation behaviors of mutual impurities. Aluminum co-implanted with phosphorus compensates carrier concentration, and retards the phosphorus diffusion.

引用

页数：4

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