共 50 条
- [1] DYNAMICS OF NANOSECOND LASER ANNEALING OF AMORPHOUS AND ULTRADISPERSE IMPLANTED GERMANIUM LAYERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 598 - 599
- [3] LASER ANNEALING OF ION-IMPLANTED NISI LAYERS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 787 - 791
- [4] ANNEALING OF IMPLANTED LAYERS BY A SCANNING LASER-BEAM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1128 - 1130
- [5] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233
- [7] DIFFUSION OF IMPURITIES AS A RESULT OF LASER ANNEALING OF IMPLANTED LAYERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 350 - 352
- [10] EFFECTIVENESS OF ANNEALING OF IMPLANTED LAYERS BY MILLISECOND LASER-PULSES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1178 - 1180