Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors

被引：6

作者：

Khassanov, Artoem ^{[1
]}

Schmaltz, Thomas ^{[1
]}

Steinrueck, Hans-Georg ^{[2
]}

Magerl, Andreas ^{[2
]}

Hirsch, Andreas ^{[3
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Dept Chem & Pharm, D-91054 Erlangen, Germany

来源：

ADVANCED MATERIALS INTERFACES | 2014年 / 1卷 / 09期

关键词：

THRESHOLD VOLTAGE; DEVICES; PERFORMANCE; MONOLAYERS; POLYMER; C-60; CIRCUITS;

D O I：

10.1002/admi.201400238

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mixed self-assembled monolayers of C60-functionalized and different long-chained insulating phosphonic acids provide molecular scale non-volatile memory dielectrics for low-voltage organic thin-film transistors. The memory retention depends on the insulation of the C60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页数：6

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