Novel high-k polymers as dielectric layers for organic thin-film transistors

被引：28

作者：

Li, Yao ^{[1
]}

Wang, He ^{[2
]}

Shi, Zuosen ^{[1
]}

Mei, Jingjing ^{[1
]}

Wang, Xuesong ^{[1
]}

Yan, Donghang ^{[2
]}

Cui, Zhanchen ^{[1
]}

机构：

[1] Jilin Univ, Coll Chem, Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130012, Peoples R China

来源：

POLYMER CHEMISTRY | 2015年 / 6卷 / 37期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; ELECTRICAL-PROPERTIES; GROWTH; INSULATOR; OXIDE;

D O I：

10.1039/c5py00891c

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

In this paper, we report the design, synthesis, and dielectric properties of novel high-k and cross-linked polymer dielectric films used in low-threshold-voltage organic thin-film transistors (OTFTs). The novel polymer films are readily fabricated by spin coating followed by curing at 160 degrees C. These films exhibit excellent insulating properties, smooth surface, and high dielectric constants (7.2 and 6.8, respectively). The bottom-gate top-contact para-sexiphenyl (p-6P)/vanadyl-phthalocyanine (VOPc) OTFTs with these polymer films as the dielectric layer exhibit excellent performance in terms of threshold voltages (-3 and +3 V, respectively), charge carrier mobilities (0.8 and 0.5 cm(2) V-1 s(-1), respectively), on/off current ratio >10(4), and ultralow leakage.

引用

页码：6651 / 6658

页数：8

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