Polymer/Silicon Nanoparticle Hybrid Layer as High-k Dielectrics in Organic Thin-Film Transistors

被引：10

作者：

Wang, Xuesong ^{[1
]}

Wang, He ^{[2
]}

Li, Yao ^{[1
]}

Shi, Zuosen ^{[1
]}

Yan, Donghang ^{[2
]}

Cui, Zhanchen ^{[1
,3
]}

机构：

[1] Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Jilin, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130012, Jilin, Peoples R China

[3] Jilin Univ, Zhuhai Coll, Dept Chem & Pharm, Zhuhai 519041, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2018年 / 122卷 / 21期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; PERFORMANCE; POLYMERS; MOBILITY; GROWTH; SEMICONDUCTOR;

D O I：

10.1021/acs.jpcc.8b00866

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, a novel organic/inorganic hybrid dielectric material containing silicon nanoparticle had been designed and synthesized for using in organic thin-film transistors (OTFTs). Also, the inorganic silicon nanoparticle was modified by 2-hydroxyethyl methacrylate to completely disperse in organic polymers. The film made of these materials exhibited excellent smooth surface and high dielectric constants (5.2). The bottom-gate top-contact para-hexaphenyl (p-6P)/vanadyl-phthalocyanine OTFTs with this dielectric thin film as the dielectric layer exhibited more optimized threshold voltages (+4 V) and charge carrier mobility (0.7 cm(2) V-1 s(-1)).

引用

页码：11214 / 11221

页数：8

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