Organic thin film transistors with an organic/high-k inorganic bilayer gate dielectric layer

被引：0

作者：

Seol, Y. G. ^{[1
]}

Lee, N. -E. ^{[1
]}

Lee, S. S.

Ahn, J. H.

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Kyunggi Do, South Korea

来源：

IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited HfO(2) layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

引用

页码：1185 / 1188

页数：4

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