Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers

被引：7
|
作者：
Yu, Hsin-Chieh [1 ,2 ,3 ]
Chen, Ying-Chih [1 ,2 ,3 ]
Huang, Chun-Yuan [4 ]
Su, Yan-Kuin [1 ,2 ,3 ,5 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[4] Natl Taitung Univ, Dept Appl Sci, Taitung 950, Taiwan
[5] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 03期
关键词：
FIELD-EFFECT TRANSISTOR; POLYMERIC GATE ELECTRET; HYSTERESIS; ELEMENT;
D O I：
10.1143/APEX.5.034101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (Delta V-th, >20V), switchable channel current, and long retention time. (c) 2012 The Japan Society of Applied Physics
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页数：3
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