Spin coherence of holes in GaAs/AlGaAs quantum wells

被引：0

作者：

Syperek, Marcin ^{[1
,2
]}

Yakovlev, D. R. ^{[1
]}

Greilich, A. ^{[1
]}

Bayer, M. ^{[1
]}

Misiewicz, J. ^{[2
]}

Reuter, D. ^{[3
]}

Wieck, A. ^{[3
]}

机构：

[1] Univ Dortmund, Expt Sci 2, D-44221 Dortmund, Germany

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[3] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

coherence; GaAs; quantum well;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pump-probe time-resolved Kerr rotation technique has been used for experimental investigation of hole spin coherence in 15-nm wide GaAs/AlGaAs quantum well structure in regime of diluted two-dimensional hole gas. Due to the spectral width of 1.5 ps laser pulses which correspond to similar to 1 meV, selective excitation of trion and exciton states has been performed. In the case of resonant excitation of exciton only the electron spin beats have been observed in the presence of magnetic field. In the case of resonant excitation of the positively charged exciton two component decay of time-resolved Kerr rotation (TRKR) signal appeared. From the period of the quantum beat oscillation related to long decay component (up to 650 ps) of TRKR signal we obtained in-plain hole g-factor of similar to 0.048 +/- 0.005.

引用

页码：1303 / +

页数：2

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