Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

被引：20
|
作者：
Tackeuchi, A [1 ]
Kuroda, T
Muto, S
Wada, O
机构：
[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
[3] FESTA Labs, Tsukuba, Ibaraki 3002635, Japan
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 272卷 / 1-4期
关键词：
spin relaxation; GaAs; InGaAs; MQW; D'yakonov-Perel'; Elliott-Yafet;
D O I：
10.1016/S0921-4526(99)00383-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, tau(s), for GaAs MQWs was found to depend on the electron confinement energy, E-1e, according to tau(s) proportional to E-le(-2.2), demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured tau(s) of InGaAs MQWs vary depending on the quantum confinement energy, E-le, according to tau(s) proportional to E-le(-1.0). tau(s) for QWs by the Elliott-Yafet process is calculated and shown to vary according to tau(s) proportional to E-le(-1). The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：318 / 323
页数：6
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