Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

被引：20

作者：

Tackeuchi, A ^{[1
]}

Kuroda, T

Muto, S

Wada, O

机构：

[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan

[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

[3] FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 272卷 / 1-4期

关键词：

spin relaxation; GaAs; InGaAs; MQW; D'yakonov-Perel'; Elliott-Yafet;

D O I：

10.1016/S0921-4526(99)00383-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, tau(s), for GaAs MQWs was found to depend on the electron confinement energy, E-1e, according to tau(s) proportional to E-le(-2.2), demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured tau(s) of InGaAs MQWs vary depending on the quantum confinement energy, E-le, according to tau(s) proportional to E-le(-1.0). tau(s) for QWs by the Elliott-Yafet process is calculated and shown to vary according to tau(s) proportional to E-le(-1). The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：318 / 323

页数：6

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