Near-band-edge photoluminescence emission in AlxGa1-xN under high pressure

被引：14
|
作者：
Shan, W [1 ]
Ager, JW
Walukiewicz, W
Haller, EE
Little, BD
Song, JJ
Schurman, M
Feng, ZC
Stall, RA
Goldenberg, B
机构：
[1] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA
[3] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA
[4] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
[5] EMCORE Corp, Somerset, NJ 08873 USA
[6] Honeywell Technol Ctr, Plymouth, MN 55420 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期
关键词：
D O I：
10.1063/1.121277
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present results of pressure-dependent photoluminescence (PL) studies of single-crystal AlxGa1-xN epitaxial films grown on sapphire substrates by metalorganic chemical vapor deposition. PL measurements were performed under hydrostatic pressure using the diamond-anvil-cell technique. PL spectra taken from the AlxGa1-xN epitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct Gamma band gap of AlxGa1-xN were determined. Our results yield a pressure coefficient of 4.0x10(-3) eV/kbar for Al0.05Ga0.95N and 3.6x10(-3) eV/kbar for Al0.35Ga0.65N. (C) 1998 American Institute of Physics.
引用
收藏
页码：2274 / 2276
页数：3
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