Effect of the carrier concentration on the field emission from AlxGa1-xN

We investigate the carrier concentration-dependence of the field emission from the the ternary alloy AlxGa1-xN. The field emission current density j is calculated as a function of the carrier concentration in the range of 10(5) < n less than or equal to 10(20) cm(-3). The effect of n on j changes with the field intensity F and the stoichiometric composition x. In the region of x < 0.1, j increases more rapidly with increasing n for large x. than for small x. Its effect becomes in ore pronounced as F becomes stronger. It is also shown that a certain difference in F Yields less change in j at low n and large x than at high n and small x.