Effect of the carrier concentration on the field emission from AlxGa1-xN

被引：0

作者：

Chung, MS ^{[1
]}

Yoon, BG

Seo, HS

Miskovsky, NM

Cutler, PH

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2001年 / 39卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the carrier concentration-dependence of the field emission from the the ternary alloy AlxGa1-xN. The field emission current density j is calculated as a function of the carrier concentration in the range of 10(5) < n less than or equal to 10(20) cm(-3). The effect of n on j changes with the field intensity F and the stoichiometric composition x. In the region of x < 0.1, j increases more rapidly with increasing n for large x. than for small x. Its effect becomes in ore pronounced as F becomes stronger. It is also shown that a certain difference in F Yields less change in j at low n and large x than at high n and small x.

引用

页码：S14 / S17

页数：4

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