Ionicity of SiC polytypes

被引：0

作者：

Wellenhofer, G ^{[1
]}

Karch, K ^{[1
]}

Pavone, P ^{[1
]}

Rossler, U ^{[1
]}

Strauch, D ^{[1
]}

机构：

[1] UNIV JENA,IFTO,D-07743 JENA,GERMANY

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a first-principles study of ionicity in SiC polytypes using two different approaches, a static and a dynamic one. Our calculations are performed within the framework of density-functional theory (DFT) and linear-response approach to DFT. Special attention is paid in applying these concepts to hexagonal polytypes and discussing the pressure-induced increase of the ionicity in SiC.

引用

页码：301 / 304

页数：4

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