ELECTRON MOBILITY MEASUREMENTS IN SIC POLYTYPES

被引：51

作者：

BARRETT, DL

CAMPBELL, RB

机构：

来源：

关键词：

D O I：

10.1063/1.1709008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：53 / +

页数：1

共 50 条

[1] ELECTRON MOBILITIES IN SIC POLYTYPES
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[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 50 - &
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[J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 301 - 304
[5] ELECTRON-MICROSCOPY STUDIES OF LONG-PERIOD POLYTYPES OF SIC
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[6] Calculation of electron Hall mobility in SiC
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