Single-electron majority logic circuits

被引:0
|
作者
Iwamura, H [1 ]
Akazawa, M [1 ]
Amemiya, Y [1 ]
机构
[1] Hokkaido Univ, Fac Engn, Sapporo, Hokkaido 060, Japan
关键词
single electron majority logic; threshold logic; gate; circuit; thermal noise;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes an architecture for circuit construction for developing single-electron integrated circuits based on majority logic. The majority logic gate circuit proposed consists of a capacitor array for input summation and a single-electron inverter for threshold operation, It accepts an odd number of inputs and produces the corresponding output on the basis of the principle of majority decision. it produces an output of logic "1" if the majority of the inputs is 1, and an output of "0" if the majority is 0, By combining the proposed majority gate circuits, various subsystems fan be constructed with a smaller number of devices than that of Boolean-based construction. An adder and a parity generator are designed as examples. It is shown by computer simulation that the designed subsystems produce the correct logic operations. The operation error induced by thermal agitation is also estimated.
引用
收藏
页码:42 / 48
页数:7
相关论文
共 50 条
  • [31] Nanoelectronic single-electron transistor circuits and architectures
    Gerousis, CP
    Goodnick, SM
    Porod, W
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2004, 32 (05) : 323 - 338
  • [32] Performance of single-electron transistor logic composed of multi-gate single-electron transistors
    Pohang Univ of Science and, Technology, Kyungbuk, Korea, Republic of
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (6706-6710):
  • [33] THE MULTIPLE-TUNNEL JUNCTION AND ITS APPLICATION TO SINGLE-ELECTRON MEMORY AND LOGIC-CIRCUITS
    NAKAZATO, K
    AHMED, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 700 - 706
  • [34] Single-electron logic device with simple structure
    Oya, T
    Asai, T
    Amemiya, Y
    ELECTRONICS LETTERS, 2003, 39 (13) : 965 - 967
  • [35] Macromolecular Photoediting Using Single-Electron Logic
    Galan, Nicholas J.
    Cobbold, Boris E.
    Cromer, Chase E.
    Brantley, Johnathan N.
    ACS MACRO LETTERS, 2023, 12 (12) : 1623 - 1628
  • [36] Reconfigurable Single-electron Transistor Logic Gates
    Sui, Bing-cai
    Chi, Ya-qing
    Zhou, Hai-liang
    Xing, Zuo-cheng
    Fang, Liang
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 567 - 570
  • [37] Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic
    Kim, DH
    Sung, SK
    Kim, KR
    Lee, JD
    Park, BG
    Choi, BH
    Hwang, SW
    Ahn, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 627 - 635
  • [38] Single-electron transistors based on gate-induced Si island for single-electron logic application
    Kim, DH
    Sung, SK
    Kim, KR
    Lee, JD
    Park, BG
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (04) : 170 - 175
  • [39] Coulomb blockade, single-electron transistors and circuits in silicon
    Durrani, ZAK
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 572 - 578
  • [40] Determination of lowest energy state in single-electron circuits
    Karafyllidis, I
    ELECTRONICS LETTERS, 1998, 34 (25) : 2401 - 2403