A new InP/InGaAlAs multiple-negative-differential-resistance (MNDR) switching device

被引：0
|
作者：
Wang, WC [1 ]
Liu, WC [1 ]
Pan, HJ [1 ]
Cheng, CC [1 ]
Feng, SC [1 ]
Yen, CH [1 ]
Shih, HJ [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源：
COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII) | 2000年 / 2000卷 / 01期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new interesting S-shaped multiple negative-differential-resistance (MNDR) switch based on the InP/InGaAlAs material system has been fabricated successfully. The novel MNDR is found under the inverted operation mode at room temperature. Moreover, the special multiple-route and multiple-step current-voltage (I-V) characteristics are observed resulting from the sequential carrier accumulation process at InGaAs quantum well at low temperature. Consequentially, from experimental results, the studied device is suitable for multiple-valued logic applications.
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页码：224 / 228
页数：5
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