Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

被引：0
|
作者：
Denisov, S. A. [1 ]
Chalkov, V. Yu. [1 ]
Shengurov, V. G. [1 ]
Svetlov, S. P. [1 ]
Pavlov, D. A. [1 ]
Pitirimova, E. A. [1 ]
机构：
[1] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia
来源：
INORGANIC MATERIALS | 2010年 / 46卷 / 07期
关键词：
ON-SAPPHIRE; FILMS;
D O I：
10.1134/S0020168510070010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural perfection and surface morphology of sapphire substrates vacuum-annealed at atomic Si flux densities from 5 x 10(15) to 1 x 10(16) at/(cm(2) s) have been studied by electron diffraction, X-ray diffraction, and atomic force microscopy. The results demonstrate that, after annealing in the range 1160-1330A degrees C, the sapphire has a smooth, single-crystal surface, which enables the growth of twin-free silicon epilayers at 600-700A degrees C.
引用
收藏
页码：693 / 702
页数：10
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