Application of molecular-beam epitaxy to the growth of homoepitaxial silicon layers on a porous silicon surface after its low-temperature cleaning in vacuum

By the methods of optical metallography, electron diffraction, and electron microscopy, thin (0.5- 2 μm) silicon layers, produced by the method of molecular-beam epitaxy on porous silicon substrates, are examined. It is demonstrated, that low-temperature substrate cleaning in a flow of silicon atoms from a passivating oxide coating with subsequent silicon deposition through sublimation produces smooth epitaxial silicon layers on porous silicon with sharp and plane interfaces.