Application of molecular-beam epitaxy to the growth of homoepitaxial silicon layers on a porous silicon surface after its low-temperature cleaning in vacuum

被引：0

作者：

Shengurov, V.G. ^{[1
]}

Shabanov, V.N. ^{[1
]}

Gudkova, N.V. ^{[1
]}

Tkach, B.Ya. ^{[1
]}

机构：

[1] NI Fiziko-Technicheskij Inst pri, Nizhegorodskom Gosuniversitete, Nizhnij Novgorod, Russia

来源：

Mikroelektronika | 1993年 / 01期

关键词：

Epitaxial growth - Measurements;

D O I：

暂无

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

By the methods of optical metallography, electron diffraction, and electron microscopy, thin (0.5- 2 μm) silicon layers, produced by the method of molecular-beam epitaxy on porous silicon substrates, are examined. It is demonstrated, that low-temperature substrate cleaning in a flow of silicon atoms from a passivating oxide coating with subsequent silicon deposition through sublimation produces smooth epitaxial silicon layers on porous silicon with sharp and plane interfaces.

引用

页码：19 / 21

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