Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

被引：0

作者：

Denisov, S. A. ^{[1
]}

Chalkov, V. Yu. ^{[1
]}

Shengurov, V. G. ^{[1
]}

Svetlov, S. P. ^{[1
]}

Pavlov, D. A. ^{[1
]}

Pitirimova, E. A. ^{[1
]}

机构：

[1] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

来源：

INORGANIC MATERIALS | 2010年 / 46卷 / 07期

关键词：

ON-SAPPHIRE; FILMS;

D O I：

10.1134/S0020168510070010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural perfection and surface morphology of sapphire substrates vacuum-annealed at atomic Si flux densities from 5 x 10(15) to 1 x 10(16) at/(cm(2) s) have been studied by electron diffraction, X-ray diffraction, and atomic force microscopy. The results demonstrate that, after annealing in the range 1160-1330A degrees C, the sapphire has a smooth, single-crystal surface, which enables the growth of twin-free silicon epilayers at 600-700A degrees C.

引用

页码：693 / 702

页数：10

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