Positron interactions with overlayers of oxygen on GaAs(100)

被引：3
|
作者：
Kim, JH
Nangia, A
Weiss, AH
机构：
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510106, Japan
[2] Univ Texas, Dept Phys, Arlington, TX 76019 USA
来源：
RADIATION PHYSICS AND CHEMISTRY | 2000年 / 58卷 / 5-6期
关键词：
D O I：
10.1016/S0969-806X(00)00233-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The positron work-function, re-emission yield, and positronium fraction of an n-doped GaAs(100) surface were measured as a function of oxygen exposure. The energy distribution of positrons observed to be re-emitted indicated that the clean and oxygen exposed n-doped GaAs(100) surfaces had negative positron work-functions. The fraction of incident positrons re-emitted as bare positrons, (Y), was found to increase and the fraction re-emitted as positronium, (fps), to decrease with increasing oxygen exposure. This suggests that surface modified GaAs may be useful as a contact material in the fabrication of GaAs based FAMs. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：655 / 658
页数：4
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