Positron interactions with overlayers of oxygen on GaAs(100)

被引：3
|
作者：
Kim, JH
Nangia, A
Weiss, AH
机构：
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510106, Japan
[2] Univ Texas, Dept Phys, Arlington, TX 76019 USA
来源：
RADIATION PHYSICS AND CHEMISTRY | 2000年 / 58卷 / 5-6期
关键词：
D O I：
10.1016/S0969-806X(00)00233-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The positron work-function, re-emission yield, and positronium fraction of an n-doped GaAs(100) surface were measured as a function of oxygen exposure. The energy distribution of positrons observed to be re-emitted indicated that the clean and oxygen exposed n-doped GaAs(100) surfaces had negative positron work-functions. The fraction of incident positrons re-emitted as bare positrons, (Y), was found to increase and the fraction re-emitted as positronium, (fps), to decrease with increasing oxygen exposure. This suggests that surface modified GaAs may be useful as a contact material in the fabrication of GaAs based FAMs. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：655 / 658
页数：4
相关论文
共 50 条
  • [21] DESTABILIZATION OF GAAS(100) RECONSTRUCTIONS BY ADSORBED OXYGEN
    VERHEIJ, LK
    FREITAG, MK
    WIEGERSHAUS, F
    SURFACE SCIENCE, 1995, 342 (1-3) : 47 - 54
  • [22] INTERFACE MORPHOLOGY OF AL, GE, AND IN OVERLAYERS ON GAAS(100) BY POLAR-ANGLE-RESOLVED PHOTOEMISSION
    STOFFEL, NG
    TUROWSKI, M
    MARGARITONDO, G
    PHYSICAL REVIEW B, 1984, 30 (06): : 3294 - 3301
  • [23] THICK SODIUM OVERLAYERS ON GAAS(110)
    HEINEMANN, M
    SCHEFFLER, M
    PHYSICAL REVIEW B, 1994, 49 (08): : 5516 - 5521
  • [24] GROWTH OF SB OVERLAYERS ON GAAS(110)
    STRUMPLER, R
    LUTH, H
    SURFACE SCIENCE, 1987, 182 (03) : 545 - 556
  • [25] CR, CO, PD, AU, AND IN OVERLAYERS ON PBS(100) - ADATOM INTERACTIONS AND INTERFACE FORMATION
    TRAFAS, BM
    VITOMIROV, IM
    ALDAO, CM
    GAO, Y
    XU, F
    WEAVER, JH
    PARTIN, DL
    PHYSICAL REVIEW B, 1989, 39 (05): : 3265 - 3273
  • [26] Studies of positron states and annihilation characteristics at the reconstructed (100) surface of GaAs
    Fazleev, NG
    Fry, JL
    Weiss, AH
    RADIATION PHYSICS AND CHEMISTRY, 2003, 68 (3-4) : 609 - 612
  • [27] COMPARATIVE STUDIES OF OXYGEN-ADSORPTION ON GAAS(110) SURFACES WITH ULTRATHIN ALUMINUM AND CESIUM OVERLAYERS
    SKEATH, P
    SU, CY
    CHYE, PW
    PIANETTA, P
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1439 - 1442
  • [28] The polarization of Sb overlayers on NiMnSb(100)
    Komesu, T
    Borca, CN
    Jeong, HK
    Dowben, PA
    Ristoiu, D
    Nozières, JP
    Stadler, S
    Idzerda, YU
    PHYSICS LETTERS A, 2000, 273 (04) : 245 - 251
  • [29] FORMATION OF THE IONIC PART IN THE SI-SI BOND OF CHEMISORBED SI OVERLAYERS ON METALLIC TERMINATED GAAS(100) AND INAS(100) SURFACES
    KARPUSHIN, AA
    KANTER, YO
    SOROKIN, AN
    FOMICHEV, YA
    VACUUM, 1990, 41 (1-3) : 640 - 642
  • [30] Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers
    G. V. Benemanskaya
    D. V. Daineka
    G. É. Frank-Kamenetskaya
    Journal of Experimental and Theoretical Physics, 1998, 87 : 1167 - 1171
12345