InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm

被引：13
|
作者：
Jang, YD
Yim, JS
Lee, UH
Lee, D [1 ]
Jang, JW
Park, KH
Jeong, WG
Lee, JH
Oh, DK
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea
[3] Elect & Telecommun Res Inst, Taejon 305350, South Korea
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
quantum dot; laser diode; nitrogen;
D O I：
10.1016/S1386-9477(02)00744-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A strong and narrow photoluminescence (PL) signal with a full-width at half-maximum of 34 meV emitting at 1.3 mum at room temperature has been obtained from InAsN quantum dots (QD) on GaAs. The PL yield of the 1.3 mum peak at room temperature remains at 8% of the value at 10 K and the carrier lifetime at 10 K is measured to be 600 ps. We believe these values indicate that the gown InAsN QDs are of high crystal quality (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：127 / 128
页数：2
相关论文
共 50 条
  • [41] Room temperature λ=1.3 μm photoluminescence from InGaAs quantum dots on (001) Si substrate
    Burbaev, TM
    Kazakov, IP
    Kurbatov, VA
    Rzaev, MM
    Tsvetkov, VA
    Tsekhosh, VI
    SEMICONDUCTORS, 2002, 36 (05) : 535 - 538
  • [42] Room temperature λ=1.3 µm photoluminescence from InGaAs quantum dots on (001) Si substrate
    T. M. Burbaev
    I. P. Kazakov
    V. A. Kurbatov
    M. M. Rzaev
    V. A. Tsvetkov
    V. I. Tsekhosh
    Semiconductors, 2002, 36 : 535 - 538
  • [43] Ultranarrow photoluminescence line in 1.3-1.55 μm of single InAs/InP quantum dots
    Takemoto, K
    Sakuma, Y
    Hirose, S
    Usuki, T
    Yokoyama, N
    Miyazawa, T
    Takatsu, M
    Arakawa, Y
    Physics of Semiconductors, Pts A and B, 2005, 772 : 743 - 744
  • [44] Long wavelength and narrow photoluminescence linewidth from InAs quantum dots with GaAs cap layer on GaAs (100) substrate
    Saravanan, S
    Shimizu, H
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) : 14 - 17
  • [45] 1.3 μm photoluminescence from multi-stacked InAs/GaAs quantum dot structure
    Liu, Ning
    Jin, Peng
    Wu, Ju
    Wang, Zhanguo
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 215 - 217
  • [46] Quantum dots for VCSEL applications at λ=1.3 μm
    Ledentsov, N
    Bimberg, D
    Ustinov, VM
    Alferov, ZI
    Lott, JA
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 871 - 875
  • [47] Synthesis of Colloidal Quantum Dots with an Ultranarrow Photoluminescence Peak
    Huang, Lin
    Ye, Zikang
    Yang, Lei
    Li, Jiongzhao
    Qin, Haiyan
    Peng, Xiaogang
    CHEMISTRY OF MATERIALS, 2021, 33 (05) : 1799 - 1810
  • [48] PHOTOLUMINESCENCE FROM GAAS/ALGAAS QUANTUM WIRES AND QUANTUM DOTS
    BRUNNER, K
    BOCKELMANN, U
    ABSTREITER, G
    WALTHER, M
    BOHM, G
    TRANKLE, G
    WEIMANN, G
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 107 - 114
  • [49] Optical properties of 1.3 μm InAs/GaAs bilayer quantum dots with high areal density
    Ngo, C. Y.
    Yoon, S. F.
    Lim, D. R.
    Wong, Vincent
    Chua, S. J.
    APPLIED PHYSICS LETTERS, 2009, 95 (18)
  • [50] Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3 μm
    Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan
    不详
    不详
    不详
    Journal of Applied Physics, 2008, 104 (01):
12345