1.3 μm photoluminescence from multi-stacked InAs/GaAs quantum dot structure

被引：0
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作者：
Liu, Ning [1 ]
Jin, Peng [1 ]
Wu, Ju [1 ]
Wang, Zhanguo [1 ]
机构：
[1] Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / SUPPL.期
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页码：215 / 217
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