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- [1] Advanced al damascene process for fine trench under 70nm design ruleMaterials, Technology and Reliability of Advanced Interconnects-2005, 2005, 863 : 233 - 238Han, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaChoi, K论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaYun, S论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaPark, JH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaLee, WS论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaLee, SW论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaChoi, GH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaHong, CK论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaKim, ST论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaChung, U论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaMoon, JT论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South KoreaRyu, B论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin 449711, Kyungki Do, South Korea
- [2] 高性能70nm CMOS器件(英文)半导体学报, 2001, (02) : 134 - 139徐秋霞论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京钱鹤论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京殷华湘论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京贾林论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京季红浩论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京陈宝钦论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京朱亚江论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京刘明论文数: 0 引用数: 0 h-index: 0机构: 中国科学院微电子中心一室!北京
- [3] High performance 70nm Gate Length Germanium-On-Insulator pMOSFET With High- /Metal GateESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 75 - 78Romanjek, K.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceHutin, L.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceLe Royer, C.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FrancePouydebasque, A.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceJaud, M. -A.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceTabone, C.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceAugendre, E.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceSanchez, L.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceHartmann, J. -M.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceGrampeix, H.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceMazzocchi, V.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceSoliveres, S.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceTruche, R.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceClavelier, L.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceScheiblin, P.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceGarros, X.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceReimbold, G.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceVinet, M.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceBoulanger, F.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, FranceDeleonibus, S.论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, MINATEC, F-38054 Grenoble 9, France CEA, LETI, MINATEC, F-38054 Grenoble 9, France
- [4] A novel dram cell design and process for 70nm generation2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 101 - +Chung, C. H.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChien, T.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanHsiao, J. S.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChu, C. H.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanKuo, W. S.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanCheng, C. C.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanLi, F.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanNieh, S.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanWu, S.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanWang, B.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanWang, C.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanHu, T.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanHsiao, G.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChe, M.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanHon, R. Y.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChen, H. M.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChou, G.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChang, G.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanChou, L.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanShu, H. C.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanHuang, K. Y.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, TaiwanTsai, V.论文数: 0 引用数: 0 h-index: 0机构: ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan ProMOS Technol Inc, Core Memory Tech Dev Div, 19,Li Hsin Rd,HsinChu Sci Pk, Hsinchu, Taiwan
- [5] 75nm damascene metal gate and High-k integration for advanced CMOS devicesINTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 355 - 358Guillaumot, B论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceGarros, X论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceLime, F论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceOshima, K论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceTavel, B论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceChroboczek, JA论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceMasson, P论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceTruche, R论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FrancePapon, AM论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceMartin, F论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceDamlencourt, JF论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceMaitrejean, S论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceRivoire, M论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceLeroux, C论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceCristoloveanu, S论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceGhibaudo, G论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceAutran, JL论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceSkotnicki, T论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, FranceDeleonibus, S论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, F-38926 Crolles, France STMicroelect, F-38926 Crolles, France
- [6] A D-Band Monolithic Doubler in 70nm GaAs mHEMT Process2017 17TH IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION TECHNOLOGY (ICCT 2017), 2017, : 1070 - 1073Wen, Jincai论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Inst VLSI Design, Hangzhou, Zhejiang, Peoples R China Hangzhou Dianzi Univ, Key Lab RF Cir&Sys, Minist Educ, Hangzhou, Zhejiang, Peoples R China Zhejiang Univ, Inst VLSI Design, Hangzhou, Zhejiang, Peoples R ChinaSun, Lingling论文数: 0 引用数: 0 h-index: 0机构: Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou, Zhejiang, Peoples R China Zhejiang Univ, Inst VLSI Design, Hangzhou, Zhejiang, Peoples R China论文数: 引用数: h-index:机构:Wu, Ting论文数: 0 引用数: 0 h-index: 0机构: Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou, Zhejiang, Peoples R China Zhejiang Univ, Inst VLSI Design, Hangzhou, Zhejiang, Peoples R ChinaLiu, Jun论文数: 0 引用数: 0 h-index: 0机构: Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou, Zhejiang, Peoples R China Zhejiang Univ, Inst VLSI Design, Hangzhou, Zhejiang, Peoples R China
- [7] CMP-less Planarization Technology with SOG/LTO Etchback for Low Cost 70nm Gate-Last ProcessCHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 749 - 754Yin, Huaxiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R ChinaMen, Lingkuan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R ChinaYang, Tao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R ChinaXu, Gaobo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R ChinaXu, Qiuxia论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R ChinaZhao, Chao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R ChinaChen, Dapeng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 10029, Peoples R China
- [8] Aberration control for 70nm optical lithographyLITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING II, 2001, 4404 : 279 - 289Sewell, H论文数: 0 引用数: 0 h-index: 0机构: SVG Litog Syst Inc, Wilton, CT 06897 USA SVG Litog Syst Inc, Wilton, CT 06897 USAMcClay, J论文数: 0 引用数: 0 h-index: 0机构: SVG Litog Syst Inc, Wilton, CT 06897 USA SVG Litog Syst Inc, Wilton, CT 06897 USAGuzman, A论文数: 0 引用数: 0 h-index: 0机构: SVG Litog Syst Inc, Wilton, CT 06897 USA SVG Litog Syst Inc, Wilton, CT 06897 USALafiandra, C论文数: 0 引用数: 0 h-index: 0机构: SVG Litog Syst Inc, Wilton, CT 06897 USA SVG Litog Syst Inc, Wilton, CT 06897 USA
- [9] 157nm lithography for 70nm technology nodeMICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 306 - 307Itani, T论文数: 0 引用数: 0 h-index: 0机构: Semicond Leading Edge Technol Inc, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan Semicond Leading Edge Technol Inc, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan
- [10] Damascene metal gate technologyADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000), 2001, : 529 - 534Nakajima, K论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, JapanAkasaka, Y论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, JapanSaito, T论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, JapanMatsuo, K论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, JapanYagishita, A论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, JapanSuguro, K论文数: 0 引用数: 0 h-index: 0机构: Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa 2358522, Japan