IV-VI resonant-cavity enhanced photodetectors for the mid-infrared

被引：9
|
作者：
Böberl, M [1 ]
Fromherz, T [1 ]
Schwarzl, T [1 ]
Springholz, G [1 ]
Heiss, W [1 ]
机构：
[1] Univ Linz, Inst Halbleiter & Festorperphys, A-4040 Linz, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 12期
关键词：
D O I：
10.1088/0268-1242/19/12/L02
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A resonant-cavity enhanced detector operating in the mid-infrared at a wavelength around 3.6 mum is demonstrated. The device is based on a narrow-gap lead-salt heterostructure epitaxially grown on a BaF2(111) substrate. Below 140 K, the photovoltage clearly shows a single narrow cavity resonance, with a Deltalambda/lambda ratio of only 2% at 80 K.
引用
收藏
页码：L115 / L117
页数：3
相关论文
共 50 条
  • [1] Resonant-cavity-enhanced photodetectors for the mid-infrared
    Arnold, M
    Zimin, D
    Zogg, H
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (14) : 1 - 3
  • [2] Characterisation of a Resonant-Cavity Enhanced Thermal Emitter for the Mid-Infrared
    Soellradl, Thomas
    Ranacher, Christian
    Consani, Cristina
    Puehringer, Gerald
    Lodha, Surabhi
    Jakoby, Bernhard
    Grille, Thomas
    [J]. 2017 IEEE SENSORS, 2017, : 597 - 599
  • [3] Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared
    Green, AM
    Gevaux, DG
    Roberts, C
    Phillips, CC
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 531 - 535
  • [4] Optical characterization of IV-VI mid-infrared VCSEL
    Zhao, F
    Wu, H
    Zheng, T
    McCann, PJ
    Majumdar, A
    Jayasinghe, L
    Shi, Z
    [J]. PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 355 - 361
  • [5] IV-VI mid-infrared VECSEL on Si-substrate
    Fill, M.
    Felder, F.
    Rahim, M.
    Khiar, A.
    Rodriguez, R.
    Zogg, H.
    Ishida, A.
    [J]. VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) II, 2012, 8242
  • [6] IV-VI compound semiconductor mid-infrared vertical cavity surface emitting lasers grown by MBE
    Shi, Z
    Xu, G
    McCann, PJ
    Fang, XM
    Dai, N
    Bewley, WW
    Felix, CL
    Vurgaftman, I
    Meyer, JR
    [J]. INFRARED APPLICATIONS OF SEMICONDUCTORS III, 2000, 607 : 181 - 184
  • [7] Resonant Cavity Enhanced Photodetectors for the Mid-Wave Infrared
    Craig, A. P.
    Golding, T.
    Savich, G. R.
    Wicks, G. W.
    Marshall, A. R.
    [J]. EMERGING IMAGING AND SENSING TECHNOLOGIES FOR SECURITY AND DEFENCE IV, 2019, 11163
  • [8] Mid-infrared tunable resonant cavity enhanced detectors
    Quack, Niels
    Blunier, Stefan
    Dual, Jurg
    Felder, Ferdinand
    Arnold, Martin
    Zogg, Hans
    [J]. SENSORS, 2008, 8 (09) : 5466 - 5478
  • [9] II-VI resonant cavity light emitting diodes for the mid-infrared
    Bleuse, J
    Hadji, E
    Magnea, N
    Pautrat, JL
    [J]. MICROCAVITIES AND PHOTONIC BANDGAPS: PHYSICS AND APPLICATIONS, 1996, 324 : 353 - 362
  • [10] Resonant-cavity photodetectors: performance and functionality
    Campbell, JC
    Bean, JC
    Deppe, DG
    Huffaker, DL
    Streetman, BG
    [J]. OPTOELECTRONIC INTEGRATED CIRCUITS II, 1997, 3290 : 34 - 40
12345