IV-VI compound semiconductor mid-infrared vertical cavity surface emitting lasers grown by MBE

被引：0
|
作者：
Shi, Z
Xu, G
McCann, PJ
Fang, XM
Dai, N
Bewley, WW
Felix, CL
Vurgaftman, I
Meyer, JR
机构：
[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA
[2] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
[3] USN, Res Lab, Washington, DC 20375 USA
来源：
INFRARED APPLICATIONS OF SEMICONDUCTORS III | 2000年 / 607卷
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mid-infrared vertical cavity surface emitting lasers (VCSELs) using PbSe as the active material and broadband high reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors (DBR) as bottom and top mirrors were grown by molecular beam epitaxy. By pulsed optical pumping, this first IV-VI semiconductor VCSEL operated up to 290K at a wavelength of 4.5 mu m. Further optimization of such VCSELs could lead to room temperature continuos wave operation.
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收藏
页码：181 / 184
页数：4
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