IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

被引：58
|
作者：
Shi, Z [1 ]
Xu, G
McCann, PJ
Fang, XM
Dai, N
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
机构：
[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA
[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA
[3] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
[4] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期
关键词：
D O I：
10.1063/1.126750
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Midinfrared broadband high-reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors and vertical-cavity surface-emitting lasers (VCSELs) with PbSe as the active material were grown by molecular-beam epitaxy. Because of an extremely high index contrast, mirrors with only three quarter-wave layer pairs had reflectivities exceeding 99%. For pulsed optical pumping, a lead salt VCSEL emitting at the cavity wavelength of 4.5-4.6 mu m operated nearly to room temperature (289 K). (C) 2000 American Institute of Physics. [S0003-6951(00)04425-9].
引用
收藏
页码：3688 / 3690
页数：3
相关论文
共 50 条
  • [1] Continuous-wave emission from midinfrared IV-VI vertical-cavity surface-emitting lasers
    Fürst, J
    Pascher, H
    Schwarzl, T
    Böberl, M
    Springholz, G
    Bauer, G
    Heiss, W
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3268 - 3270
  • [2] INTEGRATION OF VERTICAL-CAVITY SURFACE-EMITTING DEVICES BY MOLECULAR-BEAM EPITAXY REGROWTH
    SAITO, H
    KOSAKA, H
    SUGIMOTO, M
    OGURA, I
    KASAHARA, K
    SUGIMOTO, Y
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (05): : 2905 - 2909
  • [3] Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
    Saarinen, M
    Xiang, N
    Vilokkinen, V
    Melanen, P
    Orsila, S
    Uusimaa, P
    Savolainen, P
    Toivonen, M
    Pessa, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 324 - 328
  • [4] MONOLITHIC INTEGRATION OF MULTIPLE WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASERS BY MASK MOLECULAR-BEAM EPITAXY
    SAITO, H
    OGURA, I
    SUGIMOTO, Y
    KASAHARA, K
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2466 - 2468
  • [5] Theoretical investigation of high temperature IV-VI compound continuous wave midinfrared vertical cavity surface emitting lasers
    Khosravani, S
    Shi, Z
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (02) : 139 - 141
  • [6] RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
    HONG, M
    VAKHSHOORI, D
    MANNAERTS, JP
    THIEL, FA
    [J]. COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 543 - 546
  • [7] High quality GaAs/InGaAs/AlGaAs vertical-cavity surface-emitting lasers grown at a constant temperature by molecular beam epitaxy
    Zhang, DH
    Li, CY
    [J]. 1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 63 - 66
  • [8] Midinfrared IV-VI vertical-cavity surface-emitting lasers with zero-, two-, and three-dimensional systems in the active regions
    Fürst, J
    Pascher, H
    Schwarzl, T
    Böberl, M
    Heiss, W
    Springholz, G
    Bauer, G
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (02) : 208 - 210
  • [9] Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
    Saarinen, M
    Xiang, N
    Dumitrescu, M
    Vilokkinen, V
    Melanen, P
    Orsila, S
    Uusimaa, P
    Savolainen, P
    Pessa, M
    [J]. VERTICAL-CAVITY SURFACE-EMITTING LASERS V, 2001, 4286 : 156 - 161
  • [10] Molecular beam epitaxy of IV-VI mid-infrared vertical cavity surface-emitting quantum well laser structures
    Wu, H
    Zhao, F
    Jayasinghe, L
    Shi, Z
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1356 - 1359
12345