Effect of oxygen to argon ratio on the properties of thin SiO x films deposited by r.f. sputtering

被引：7

作者：

Terrazas, J. M. ^{[1
]}

Nedev, N. ^{[1
]}

Manolov, E. ^{[2
]}

Valdez, B. ^{[1
]}

Nesheva, D. ^{[2
]}

Curiel, M. A. ^{[1
,3
]}

Haasch, R. ^{[3
]}

Petrov, I. ^{[3
]}

机构：

[1] Univ Autonoma Baja California, Inst Engn, Mexicali 21280, Baja California, Mexico

[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[3] Univ Illinois, Frederick Seitz Mat Res Lab, Ctr Microanal Mat, Urbana, IL 61801 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 05期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SILICON NANOCRYSTALS; MIS STRUCTURES; MEMORY; NANOPARTICLES; MATRIX; OXIDES;

D O I：

10.1007/s10854-009-9942-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Energy Dispersive X-ray and X-ray Photoelectron (XPS) spectroscopies show that SiO (x) films deposited by reactive r.f. magnetron sputtering at partial pressure ratios R between oxygen and argon in a wide range (1-0.005) have compositions close to the stoichiometric one. For these films high temperature annealing at 1,000 A degrees C shifts the band in the Fourier Transform-Infrared spectrum due to the Si-O-Si stretching vibration to values typical of stoichiometric SiO2. Further decrease of R leads to splitting of the Si 2p XPS line indicating increase of the Si content and formation of a second phase in a SiO2 matrix. The electrical properties of test MOS structures with SiO (x) gate dielectric, regarding defect density in the oxide and at the SiO (x) /c-Si interface, degrade with the decrease of R. High temperature annealing at 1,000 A degrees C strongly improves the properties of all films regarding leakage current and properties of the interface.

引用

页码：481 / 485

页数：5

共 50 条

[31] Effect of R.F Power to the Properties of ZnO Thin Films Deposited by Magnetron Sputtering
Sin, N. D. Md
Musa, M. Z.
Rusop, M.
NANOMATERIALS: SYNTHESIS AND CHARACTERIZATION, 2012, 364 : 119 - 123
[32] XRR and XPS studies of SiO2 thin films formed by r.f. magnetron sputtering
Kojima, I
Li, BQ
Fujimoto, T
SURFACE AND INTERFACE ANALYSIS, 1999, 28 (01) : 267 - 270
[33] Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature
Yu, XH
Ma, J
Ji, F
Wang, YH
Zhang, XJ
Cheng, CF
Ma, HL
JOURNAL OF CRYSTAL GROWTH, 2005, 274 (3-4) : 474 - 479
[34] Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering
Jae-Hyeong Lee
Journal of Electroceramics, 2009, 23
[35] Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering
Lee, SH
Yoon, KH
Cheong, DS
Lee, JK
THIN SOLID FILMS, 2003, 435 (1-2) : 193 - 198
[36] Study on structure and properties of ZnO:Ga films deposited on the organic substrate by r.f. magnetron sputtering
Li, Sumin
Zhao, Yutao
Zhang, Zhao
Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2007, 28 (11): : 1233 - 1238
[37] Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering
Lee, Jae-Hyeong
JOURNAL OF ELECTROCERAMICS, 2009, 23 (2-4) : 554 - 558
[38] Preparation of thin films of copper(I) bromide by r.f. sputtering: Morphology and electrical properties
Faculte des Sciences de Marseille-St, Jerome, Marseille, France
Thin Solid Films, 1-2 (31-36):
[39] Electrical resistance of Ti-B-Al-O thin films deposited by r.f. magnetron sputtering
Kim, SK
Ahn, YH
THIN SOLID FILMS, 2000, 377 (377-378) : 772 - 775
[40] Growth and properties of titania and aluminum titanate thin films obtained by r.f. magnetron sputtering
Kuo, DH
Tzeng, KH
THIN SOLID FILMS, 2002, 420 : 497 - 502

← 1 2 3 4 5 →