Effect of oxygen to argon ratio on the properties of thin SiO x films deposited by r.f. sputtering

被引：7

作者：

Terrazas, J. M. ^{[1
]}

Nedev, N. ^{[1
]}

Manolov, E. ^{[2
]}

Valdez, B. ^{[1
]}

Nesheva, D. ^{[2
]}

Curiel, M. A. ^{[1
,3
]}

Haasch, R. ^{[3
]}

Petrov, I. ^{[3
]}

机构：

[1] Univ Autonoma Baja California, Inst Engn, Mexicali 21280, Baja California, Mexico

[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[3] Univ Illinois, Frederick Seitz Mat Res Lab, Ctr Microanal Mat, Urbana, IL 61801 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 05期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SILICON NANOCRYSTALS; MIS STRUCTURES; MEMORY; NANOPARTICLES; MATRIX; OXIDES;

D O I：

10.1007/s10854-009-9942-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Energy Dispersive X-ray and X-ray Photoelectron (XPS) spectroscopies show that SiO (x) films deposited by reactive r.f. magnetron sputtering at partial pressure ratios R between oxygen and argon in a wide range (1-0.005) have compositions close to the stoichiometric one. For these films high temperature annealing at 1,000 A degrees C shifts the band in the Fourier Transform-Infrared spectrum due to the Si-O-Si stretching vibration to values typical of stoichiometric SiO2. Further decrease of R leads to splitting of the Si 2p XPS line indicating increase of the Si content and formation of a second phase in a SiO2 matrix. The electrical properties of test MOS structures with SiO (x) gate dielectric, regarding defect density in the oxide and at the SiO (x) /c-Si interface, degrade with the decrease of R. High temperature annealing at 1,000 A degrees C strongly improves the properties of all films regarding leakage current and properties of the interface.

引用

页码：481 / 485

页数：5

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