Optical and Electrical Properties of Plasmonic Electrodes for Inverted Fabrication of Organic Semiconductor Devices

被引:0
|
作者
Cheng, Zhongkai [1 ]
O'Carroll, Deirdre M. [1 ,2 ]
机构
[1] Rutgers State Univ, Dept Chem & Chem Biol, Piscataway, NJ 08901 USA
[2] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08901 USA
基金
美国国家科学基金会;
关键词
silver nanoparticles; plasmonic electrodes; inverted fabrication; light management; hole-only device;
D O I
10.1109/pvsc45281.2020.9300661
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Metal electrodes are playing an increasingly important role in controlling photon absorption and in promoting optimal light management in thin film semiconductor devices. In organic optoelectronics, the conventional fabrication approach is to build the device on top of a transparent electrode, with metal electrode deposition as the last step. This makes it challenging to control the surface of the metal electrode to promote good light management properties. An inverted fabrication approach that builds the device on top of a metal electrode, makes it possible to control the morphology of the metal surface to achieve a variety of photonic and plasmonic behavior in optoelectronic devices. Silver (Ag) is the most suitable metal for fabrication of nanostructured electrodes with plasmonic behavior (i.e. plasmonic electrodes) because of its low parasitic absorption loss and high reflectivity. In this project, we describe the facile fabrication of silver nanoparticle (AgNP) plasmonic electrodes and study their physical and optical characteristics. Then, we investigate the photonic and electrical behavior of the plasmonic electrodes when interfaced with poly(9,9-dioctylfluorene- alt-benzothiadiazole) (F8BT) organic semiconducting polymer thin films. According to the current-voltage characteristics of hole-only devices with and without plasmonic electrodes, we conclude that AgNP plasmonic electrodes have comparable electrical behavior to planar metal electrodes while having superior light management capability.
引用
收藏
页码:603 / 605
页数:3
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