Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices

被引：0

作者：

Yang, Weiquan ^{[1
]}

Li, Rui ^{[1
,2
]}

Ma, Zhenqiang ^{[3
]}

Zhou, Weidong ^{[1
]}

机构：

[1] Univ Texas Arlington, Dept Elect Engn, NanoFAB Ctr, Arlington, TX 76019 USA

[2] Dalian Univ Technol, Sch Phys & Optoelect Technol, Inst Near Field Opt & Nano Technol, Dalian 116024, Peoples R China

[3] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 09期

关键词：

THIN-FILM TRANSISTORS; SOLAR-CELLS; SILICON; NANOMEMBRANES; GAAS;

D O I：

10.1088/0268-1242/26/9/095018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here electrical properties of low-temperature-stacked electrodes for large-area flexible photonic devices, based on single-crystalline InP nanomembrane (NM) transfer and stacking processes. Au, Al and ITO electrodes were investigated. An excellent ohmic contact was demonstrated on the stacked InP NM-ITO electrode, with a measured contact resistivity of 0.45 Omega cm(2). Two types of flexible InP solar cells were also fabricated and characterized, based on the stacked InP NM-ITO and InP NM-Al contacts, respectively. The efficiency of solar cells with ITO as back contact is five times higher than that with Al as back contact. Such low-temperature energy-efficient NM transfer and electrode-stacking techniques can be applied to a wide range of flexible thin film photonic devices.

引用

页数：5

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