Degradation study of organic semiconductor devices under electrical and optical stresses

被引:5
|
作者
Jassi, Munish [1 ]
Gurunath, R. [2 ]
Iyer, S. Sundar Kumar [3 ]
机构
[1] Magma Design Automat India Pvt Ltd, Bangalore 560087, Karnataka, India
[2] Indian Inst Technol, Dept Chem, Kanpur 208016, Uttar Pradesh, India
[3] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
关键词
annealing; charge fluence; degradation; electrical and optical stresses; imidazolin-5-one; semiconductor device fabrication;
D O I
10.1109/LED.2008.920978
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Degradation due to electrical and optical stresses on organic semiconductor devices fabricated with imidazolin-5-one as an active layer is studied in this letter. It is found that while both electrical and optical stresses degrade device performance, the former leads to much faster degradation as compared with the latter. It is found that in electrical-stress degradation, the drop in current is a strong function of the charge flowing through the device during stress (charge fluence). For optical-stress degradation, it is strongly dependent on the duration of stress. It is also found that the input electrical and light energy during the stress may be annealing out some of the defects in the device and, hence, mitigating the degradation due to the applied stress.
引用
收藏
页码:442 / 444
页数:3
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