Degradation modeling of semiconductor devices and electrical circuits

被引：3

作者：

Lagies, AU ^{[1
]}

Göhler, L ^{[1
]}

Sigg, J ^{[1
]}

Türkes, P ^{[1
]}

Kraus, R ^{[1
]}

机构：

[1] Univ Bundeswehr Munich, Inst Elect, Munich, Germany

来源：

ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/SMELEC.1998.781155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A mathematical description for the degradation of semiconductor devices and electrical circuits is presented. It is based on the assumption that the reason for degradation is a destruction of internal structures, caused by the input of energy. The formulation is tested with the simulation of an IGBT module. Additionally a method is presented to shorten the simulation time as much as possible.

引用

页码：86 / 90

页数：5

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