Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core-Shell Nanowire

被引：6

作者：

Xu, Honghua ^{[1
,2
]}

Liu, Xiaoyan ^{[1
,2
]}

Du, Gang ^{[1
,2
]}

Zhao, Yuning ^{[1
,2
]}

He, Yuhui ^{[3
]}

Fan, Chun ^{[4
]}

Han, Ruqi ^{[1
,2
]}

Kang, Jinfeng ^{[1
,2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Key Lab Nanofabricat & Novel Devices Integrat Tec, Beijing 100029, Peoples R China

[4] Peking Univ, Ctr Comp, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

GROWTH; SILICON; VAPOR;

D O I：

10.1143/JJAP.49.04DN01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various Si1-xGex shell strains induced by changing the thickness or tuning the Ge and Si contents as well as by modulating the valence band structure and hole transport characteristics of core/shell nanowire field effect transistors (FETs) have been calculated. As Si1-xGex shell thickness increases, the strained valence subbands shift upwards and warp markedly. Most of the corresponding hole effective masses of the top five subbands decrease. Meanwhile, the hole mobility of the Ge(110) nanowire increases with increasing shell thickness. As the Ge concentration in the Si1-xGex shell decreases, the strained valence subbands and hole mobility show similar shifts. As a result, our calculation indicates the possibility of improving the nanowire performance of heterostructure nanowire FETs. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

共 50 条

[1] Theoretical study of the optical properties of Si1-xGex alloy, and Si/Ge and Ge/Si core/shell nanoparticles
Chehaidar, Abdallah
Jdidi, Haytham
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2015, 12 (8-9) : 663 - 675
[2] Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires
He, Yuhui
Fan, Chun
Zhao, Yu Ning
Du, Gang
Liu, Xiao Yan
Han, Ruqi
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, : 121 - +
[3] Realization and Scaling of Ge-Si1-xGex Core-Shell Nanowire n-FETs
Liu, En-Shao
Dillen, David C.
Nah, Junghyo
Fallahazad, Babak
Kim, Kyounghwan
Tutuc, Emanuel
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (12) : 4027 - 4033
[4] Study on the Si-Ge nanowire MOSFETs with the core-shell structure
Fu, Yue
He, Jin
Liu, Feng
Feng, Jie
Ma, Chenyue
Zhang, Lining
ISQED 2008: PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2008, : 531 - +
[5] Advanced Strained-Silicon and Core-Shell Si/Si1-xGex Nanowires for CMOS Transport Enhancement
Hashemi, Pouya
Poweleit, C. D.
Canonico, M.
Hoyt, J. L.
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 687 - 698
[6] Strain engineering of band offsets in Si/Ge core-shell nanowires
Huang, Shouting
Yang, Li
APPLIED PHYSICS LETTERS, 2011, 98 (09)
[7] Valence band structure and hole mobility of strained Ge/(111)Si1-xGex
Song, Jian-Jun
He, Zhu
Gao, Xiang-Yu
Zhang, He-Ming
Hu, Hui-Yong
Yi, Lv
Journal of Computational and Theoretical Nanoscience, 2015, 12 (10) : 3201 - 3205
[8] Band Structure Calculations of Ge-Si Core-Shell Nanowires
He, Yuhui
Fan, Chun
Zhao, Yu Ning
Kang, Jinfeng
Liu, Xiao Yan
Han, Ruqi
2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 155 - +
[9] Engineered core-shell Si1-xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction
1600, American Institute of Physics Inc. (114):
[10] Engineered core-shell Si1-xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction
Aouassa, M.
Ronda, A.
Favre, L.
Delobbe, A.
Sudraud, P.
Berbezier, I.
JOURNAL OF APPLIED PHYSICS, 2013, 114 (03)

← 1 2 3 4 5 →