Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

被引：1

作者：

He, Yuhui ^{[1
]}

Fan, Chun ^{[2
]}

Zhao, Yu Ning ^{[1
]}

Du, Gang ^{[1
]}

Liu, Xiao Yan ^{[1
]}

Han, Ruqi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Ctr Comp, Beijing 100871, Peoples R China

来源：

SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2008年

关键词：

strain effect; core-shell nanowire; valence band;

D O I：

10.1109/SISPAD.2008.4648252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6x6 k center dot p model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to F point, and the effective masses of more subbands begin to decrease when the shell thickness increases.

引用

页码：121 / +

页数：2

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