Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

被引:20
|
作者
Brauns, Matthias [1 ]
Ridderbos, Joost [1 ]
Li, Ang [2 ,4 ]
van der Wiel, Wilfred G. [1 ]
Bakkers, Erik P. A. M. [2 ,3 ]
Zwanenburg, Floris A. [1 ]
机构
[1] Univ Twente, MESA Inst Nanotechnol, NanoElect Grp, POB 217, NL-7500 AE Enschede, Netherlands
[2] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands
[3] Delft Univ Technol, QuTech & Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
[4] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Pingleyuan 100, Beijing 100024, Peoples R China
关键词
ISOTOPE-SEPARATION; SINGLE-CRYSTALS; INAS NANOWIRES; TRANSPORT; GROWTH;
D O I
10.1063/1.4963715
中图分类号
O59 [应用物理学];
学科分类号
摘要
We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. Published by AIP Publishing.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Band Structure Calculations of Ge-Si Core-Shell Nanowires
    He, Yuhui
    Fan, Chun
    Zhao, Yu Ning
    Kang, Jinfeng
    Liu, Xiao Yan
    Han, Ruqi
    [J]. 2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 155 - +
  • [2] Direct Detection of Hole Gas in Ge-Si Core-Shell Nanowires by Enhanced Raman Scattering
    Zhang, Shixiong
    Lopez, Francisco J.
    Hyun, Jerome K.
    Lauhon, Lincoln J.
    [J]. NANO LETTERS, 2010, 10 (11) : 4483 - 4487
  • [3] Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires
    Conesa-Boj, S.
    Li, A.
    Koelling, S.
    Brauns, M.
    Ridderbos, J.
    Nguyen, T. T.
    Verheijen, M. A.
    Koenraad, P. M.
    Zwanenburg, F. A.
    Bakkers, E. P. A. M.
    [J]. NANO LETTERS, 2017, 17 (04) : 2259 - 2264
  • [4] Raman scattering characterization of strain in Ge-Si core-shell nanowires
    Singh, Rachna
    Poweleit, C. D.
    Dailey, Eric
    Drucker, Jeff
    Menendez, Jose
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (08)
  • [5] Hole spin relaxation in Ge-Si core-shell nanowire qubits
    Hu, Yongjie
    Kuemmeth, Ferdinand
    Lieber, Charles M.
    Marcus, Charles M.
    [J]. NATURE NANOTECHNOLOGY, 2012, 7 (01) : 47 - 50
  • [6] Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge-Si Core-Shell Nanowires
    Moon, Jaeyun
    Kim, Ji-Hun
    Chen, Zack C. Y.
    Xiang, Jie
    Chen, Renkun
    [J]. NANO LETTERS, 2013, 13 (03) : 1196 - 1202
  • [7] Thermal Conductivity of Ge and Ge-Si Core-Shell Nanowires in the Phonon Confinement Regime
    Wingert, Matthew C.
    Chen, Zack C. Y.
    Dechaumphai, Edward
    Moon, Jaeyun
    Kim, Ji-Hun
    Xiang, Jie
    Chen, Renkun
    [J]. NANO LETTERS, 2011, 11 (12) : 5507 - 5513
  • [8] Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires
    Zhang, Xiaolong
    Jevasuwan, Wipakorn
    Pradel, Ken C.
    Subramani, Thiyagu
    Takei, Toshiaki
    Fukata, Naoki
    [J]. NANOSCALE, 2018, 10 (45) : 21062 - 21068
  • [9] Surface Disordered Ge-Si Core-Shell Nanowires as Efficient Thermoelectric Materials
    Markussen, Troels
    [J]. NANO LETTERS, 2012, 12 (09) : 4698 - 4704
  • [10] Defects Responsible for the Hole Gas in Ge/Si Core-Shell Nanowires
    Park, Ji-Sang
    Ryu, Byungki
    Moon, Chang-Youn
    Chang, K. J.
    [J]. NANO LETTERS, 2010, 10 (01) : 116 - 121