Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires

被引：14
|
作者：
Zhang, Xiaolong [1 ,2 ]
Jevasuwan, Wipakorn [1 ]
Pradel, Ken C. [1 ]
Subramani, Thiyagu [1 ,3 ]
Takei, Toshiaki [1 ]
Fukata, Naoki [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki, Japan
来源：
NANOSCALE | 2018年 / 10卷 / 45期
基金：
日本学术振兴会;
关键词：
SILICON NANOWIRES; PERFORMANCE; BORON; MODULATION;
D O I：
10.1039/c8nr05590d
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Core-shell nanowires (NWs) composed of silicon and germanium can be used to realize high electron (hole) mobility transistors (HEMTs) by suppressing impurity scattering due to their band offset structure and selective doping. Boron doped p-type Si/intrinsic-Ge (i-Ge) core-shell NW structures are selected to study this phenomenon. To produce HEMT devices, hole gas accumulation must be controlled in the impurity undoped i-Ge shell layers. Spectral change in the Ge optical phonon is detected with increased B doping in p-Si core NWs, showing hole gas accumulation in this system. We also fabricate p-Si/i-Ge/p-Si core-double shell NWs to more clearly demonstrate hole gas accumulation in the i-Ge layers.
引用
收藏
页码：21062 / 21068
页数：7
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