GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

被引：2
|
作者：
Chen, Fu-Bang [1 ]
Sheu, Jinn-Kong [2 ,3 ]
Yen, Wei-Yu [2 ,3 ]
Wang, Yen-Chin [1 ]
Huang, Shih-Hsien [2 ,3 ]
Liu, Chun-Nan [4 ]
Yeh, Yu-Hsiang [2 ,3 ]
Chang, Chih-Chiang [5 ]
Lee, Ming-Lun [6 ]
机构：
[1] High Power Optoelect Inc, Taichung 407, Taiwan
[2] Natl Cheng Kung Univ, Dept Photon, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Dept Photon, Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan
[4] Taiwan Semicond Mfg Co Ltd, Hsinchu 30078, Taiwan
[5] Excellence Optoelect Inc, Hsinchu 35053, Taiwan
[6] Southern Taiwan Univ Sci & Technol, Dept Electroopt Engn, Tainan 71001, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 03期
关键词：
GaN; light-emitting diodes (LEDs); ultraviolet (UV);
D O I：
10.1109/TED.2016.2518698
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A light-emitting diode (LED) consisting of an ultraviolet (UV) InGaN/AlGaN multiple quantum-well (MQW) p-i-n structure and a ten-pair green unipolar InGaN/GaN MQW grown on the same sapphire substrate was investigated. After a series of device-processing procedures, including wafer bonding and laser liftoff, the proposed UV LED structure, which features a visible indicator formed through selective-area photon recycling and exhibiting a dual-peak spectrum comprising UV and green peaks, was produced. The green peak originated from UV light generated by the electrical pumping of the epitaxially stacked green MQW. The green light emission may practically be used in indicators and warning signs during the operation of UV LEDs. The current-dependent light output of the green peak may further serve as a reference for measuring the output power of the UV peak of the proposed UV LEDs.
引用
收藏
页码：1122 / 1127
页数：6
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