Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

被引：21
|
作者：
Usman, Muhammad [1 ]
Saba, Kiran [1 ]
Jahangir, Adnan [2 ]
Kamran, Muhammad [3 ]
Muhammad, Nazeer [2 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Dept Engn Sci, Swabi 23460, Pakistan
[2] COMSATS Inst Informat Technol, Dept Math, Wah Cantt 47040, Pakistan
[3] COMSATS Inst Informat Technol, Dept Elect Engn, Wah Cantt 47040, Pakistan
来源：
ACTA MECHANICA SOLIDA SINICA | 2018年 / 31卷 / 03期
关键词：
Optoelectronic devices; Photonic bandgap materials; Visible and ultraviolet sources; Light-emitting devices; WURTZITE SEMICONDUCTORS; POLARIZATION; GROWTH; DROOP; WELLS;
D O I：
10.1007/s10338-018-0013-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of electromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.
引用
收藏
页码：383 / 390
页数：8
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