Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells

被引：23
|
作者：
Harris, JC
Someya, T
Kako, S
Hoshino, K
Arakawa, Y
机构：
[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 07期
关键词：
D O I：
10.1063/1.1289041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report photoluminescence (PL) and time-resolved PL measurements of GaN/AlxGa1-xN multiple quantum wells with barriers of high aluminum content, x = 0.5. In wells of width 1-2 nm, low temperature recombination appears to be dominated by radiative processes with lifetimes similar to 0.5 ns. Dependence of lifetime on emission energy is very small compared to InGaN quantum wells, indicating that carrier localization is very slight and interface quality is high. In 4 nm wells, PL emission at an energy below the bulk GaN band gap and long recombination lifetimes result from the polarization field across the wells. (C) 2000 American Institute of Physics. [S0003-6951(00)03433-1].
引用
收藏
页码：1005 / 1007
页数：3
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