SiC Power JFET Electrothermal Macromodel

被引：0

作者：

Masana, Francesc ^{[1
]}

Chavarria, Javier ^{[1
]}

Biel, Domingo ^{[1
]}

Poveda, Alberto ^{[1
]}

Guinjoan, Francesc ^{[1
]}

Alarcon, Eduard ^{[1
]}

机构：

[1] Polytech Univ Catalunya UPC, DEE, Barcelona, Spain

来源：

MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013 | 2013年

关键词：

SiC JFET; ABM; self heating; carrier mobility; voltage controlled capacitance; RC thermal model; PARAMETERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a SiC JFET model comprising static, dynamic and thermal features built from SPICE Analog Behavioral Modeling (ABM) controlled sources. The model is parameterized in such a way that data sheet information is enough to set it to work. The model complexity is not very high and allows for reasonably long simulation times to cope with the rather slow self heating process and still maintain enough accuracy for practical purposes.

引用

页码：444 / 447

页数：4

共 50 条

[21] Power Factor Correction using an Enhancement-mode SiC JFET
Kelley, R. L.
Mazzola, M.
Morrison, S.
Draper, W.
Sankin, I.
Sheridan, D.
Casady, J.
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, : 4766 - +
[22] Electrical Properties of Optically Triggered SiC JFET for Power Electronic Application
Shrestha, Nirajman
Mazumder, Sudip K.
Voss, Lars
2021 IEEE 12TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG), 2021,
[23] The electrothermal macromodel of ZCS resonant converter controllers for spice
Gorecki, Krzysztof
Zarebski, Janusz
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 2006, 36 (01): : 31 - 36
[24] The electrothermal macromodel of voltage mode PWM controllers for SPICE
Zarebski, Janusz
Gorecki, Krzysztof
MICROELECTRONICS JOURNAL, 2006, 37 (08) : 728 - 734
[25] Optimisation of a 4H-SiC enhancement mode power JFET
Horsfall, AB
Johnson, CM
Wright, NG
O'Neill, AG
SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 777 - 780
[26] Electrothermal power cycling of GaN and SiC cascode devices
Gunaydin, Y.
Jahdi, S.
Yu, R.
Yuan, Xibo
Alatise, Olayiwola
Gonzalez, Jose Ortiz
MICROELECTRONICS RELIABILITY, 2023, 150
[27] Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity
Pittini, Riccardo
Zhang, Zhe
Andersen, Michael A. E.
2013 IEEE ECCE ASIA DOWNUNDER (ECCE ASIA), 2013, : 233 - 239
[28] Beam Acceleration Experiment with SiC Based Power Supply and The Next Generation SiC-JFET Package
Okamura, Katsuya
Osawa, Yutaka
Wake, Masayoshi
Yoshimoto, Takashi
Sasaki, Ryosuke
Takaki, Kouichi
Takayama, Ken
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 883 - +
[29] Design and Application of High-Voltage SiC JFET and Its Power Modules
Chen, Sizhe
Liu, Ao
He, Junwei
Bai, Song
Sheng, Kuang
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2016, 4 (03) : 780 - 789
[30] Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region
Fu, Ruiyun
Grekov, Alexander
Hudgins, Jerry
Mantooth, Alan
Santi, Enrico
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2012, 48 (01) : 181 - 190

← 1 2 3 4 5 →