SiC Power JFET Electrothermal Macromodel

被引：0

作者：

Masana, Francesc ^{[1
]}

Chavarria, Javier ^{[1
]}

Biel, Domingo ^{[1
]}

Poveda, Alberto ^{[1
]}

Guinjoan, Francesc ^{[1
]}

Alarcon, Eduard ^{[1
]}

机构：

[1] Polytech Univ Catalunya UPC, DEE, Barcelona, Spain

来源：

MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013 | 2013年

关键词：

SiC JFET; ABM; self heating; carrier mobility; voltage controlled capacitance; RC thermal model; PARAMETERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a SiC JFET model comprising static, dynamic and thermal features built from SPICE Analog Behavioral Modeling (ABM) controlled sources. The model is parameterized in such a way that data sheet information is enough to set it to work. The model complexity is not very high and allows for reasonably long simulation times to cope with the rather slow self heating process and still maintain enough accuracy for practical purposes.

引用

页码：444 / 447

页数：4

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