Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs

被引：90

作者：

Ortiz-Conde, A ^{[1
]}

Sánchez, FJG ^{[1
]}

Muci, J ^{[1
]}

机构：

[1] Univ Simon Bolivar, Solid State Elect Lab, Caracas 1080A, Venezuela

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 04期

关键词：

MOS compact modeling; symmetric DG MOSFET; undoped body MOS; intrinsic channel; drain current model;

D O I：

10.1016/j.sse.2005.01.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a new drain current model for nanoscale undoped-body symmetric dual-gate MOSFETs based on a fully consistent physical description. The model consists on a single analytic equation that includes both drift and diffusion contributions. It is built on the basis of the potentials at the surface and at the center of the silicon film evaluated at the source and drain ends. The derivation is completely rigorous and is based on a procedure previously enunciated for long-channel bulk Sol MOSFETs. The expression is a continuous description valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. The validity of the model has been ascertained by extensive comparison to exact numerical simulations. The results attest to the excellent accuracy of this formulation. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：640 / 647

页数：8

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