Microdischarge EUV source array and illuminator design for a prototype lithography tool

被引:0
|
作者
Jurczyk, B. E. [1 ]
Stubbers, R. A. [1 ]
Alman, D. A. [1 ]
Hudyma, R. [2 ]
Thomas, M. [2 ]
机构
[1] Starfire Ind LLC, 60 Hazelwood Drive, Champaign, IL 61820 USA
[2] Hyper Dev LLC, San Ramon, CA 94582 USA
关键词
EUVL; HVM; source multiplexing; illuminator design;
D O I
10.1117/12.712304
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The joint specification projected in-band EUV power requirements at the intermediate focus will rise beyond 185W 2%-bw to maintain the necessary 80-100WPH throughput for economic viability. New improvements in photon efficiency and mask illumination are needed to reduce reflections and power demand, as well as improving source spatial uniformity. In 2006, Starfire Industries presented a microdischarge plasma light source concept for consideration as a potential HVM solution for high-power spatial and temporal multiplexing. Using a distributed array architecture, thermal and particle loadings become manageable when spread over 100s to 1000s of discrete units allowing power scalability. In addition, a key tenant is the potential for novel collection and illumination geometries that could simulate Kohler and pupil fill effects found in conventional fly's-eye mirror systems; thus leading to a reduction in optical elements and a factor of > 5x increase in total throughput. A top-level illuminator optical design based on the microsource array technology is presented, as well as thoughts on illumination efficiency, reticle uniformity, partial coherence and uniformity of the pupil fill for a realistic EUV source array. In addition, experimental data from xenon-based sources will be presented with a suite of plasma and optical diagnostic instruments, including conversion efficiency.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Development of the vacuum spark as an EUV source for next generation lithography
    Hoon, Chew Soo
    San, Wong Chiow
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 425 - +
  • [42] Industrialization of a Laser Produced Plasma EUV Light Source for Lithography
    Fomenkov, I.
    Schafgans, A.
    Rokitski, S.
    Kats, M.
    Stewart, J.
    LaForge, A.
    Ershov, A.
    Purvis, M.
    Tao, Y.
    Vargas, M.
    Grava, J.
    Das, P.
    Urbanski, L.
    Rafac, R.
    Lukens, J.
    Rajyaguru, C.
    Vaschenko, G.
    Abraham, M.
    Brandt, D.
    Brown, D.
    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2017,
  • [43] Modeling of bi-spectral primary source for EUV lithography
    Zhevlakov, A. P.
    Seisyan, R. P.
    Bespalov, V. G.
    Elizarov, V. V.
    Grishkanich, A. S.
    Kascheev, S. V.
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VI, 2015, 9422
  • [44] Design and characterisation of an active mirror for EUV-lithography
    Saathof, Rudolf
    Schutten, Gerrit Jan M.
    Spronck, Jo W.
    Schmidt, Robert H. Munnig
    PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2015, 41 : 102 - 110
  • [45] EUV lithography: LER design, mask, and wafer impact
    Wang, Jiahui
    Gallagher, Emily
    Van de Kerkhove, Jeroen
    Jonckheere, Rik
    Trivkovic, Darko
    OPTICAL AND EUV NANOLITHOGRAPHY XXXVII, 2024, 12953
  • [46] Pattern fidelity verification for logic design in EUV lithography
    Sugawara, Minoru
    Hendrickx, Eric
    Philipsen, Vicky
    Maloney, Chris
    Fenger, Germain
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V, 2014, 9048
  • [47] Resist materials design to improve sensitivity in EUV lithography
    Tsubaki, Hideaki
    Tsuchihashi, Tooru
    Yamashita, Katsuhiro
    Tsuchimura, Tomotaka
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
  • [48] Effect of leaving group design on EUV lithography performance
    Ongayi, Owendi
    Jain, Vipul
    Coley, Suzanne
    Valeri, David
    Amy, Kwok
    Quach, Dung
    Wagner, Mike
    Cameron, Jim
    Thackeray, Jim
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV, 2013, 8679
  • [49] A reverse design method for EUV lithography illumination system
    Mei, Qiuli
    Li, Yanqiu
    Liu, Fei
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV, 2013, 8679
  • [50] Design approach and comparison of projection cameras for EUV lithography
    Lerner, SA
    Sasian, JM
    Descour, MR
    OPTICAL ENGINEERING, 2000, 39 (03) : 792 - 802