Microdischarge EUV source array and illuminator design for a prototype lithography tool

被引:0
|
作者
Jurczyk, B. E. [1 ]
Stubbers, R. A. [1 ]
Alman, D. A. [1 ]
Hudyma, R. [2 ]
Thomas, M. [2 ]
机构
[1] Starfire Ind LLC, 60 Hazelwood Drive, Champaign, IL 61820 USA
[2] Hyper Dev LLC, San Ramon, CA 94582 USA
关键词
EUVL; HVM; source multiplexing; illuminator design;
D O I
10.1117/12.712304
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The joint specification projected in-band EUV power requirements at the intermediate focus will rise beyond 185W 2%-bw to maintain the necessary 80-100WPH throughput for economic viability. New improvements in photon efficiency and mask illumination are needed to reduce reflections and power demand, as well as improving source spatial uniformity. In 2006, Starfire Industries presented a microdischarge plasma light source concept for consideration as a potential HVM solution for high-power spatial and temporal multiplexing. Using a distributed array architecture, thermal and particle loadings become manageable when spread over 100s to 1000s of discrete units allowing power scalability. In addition, a key tenant is the potential for novel collection and illumination geometries that could simulate Kohler and pupil fill effects found in conventional fly's-eye mirror systems; thus leading to a reduction in optical elements and a factor of > 5x increase in total throughput. A top-level illuminator optical design based on the microsource array technology is presented, as well as thoughts on illumination efficiency, reticle uniformity, partial coherence and uniformity of the pupil fill for a realistic EUV source array. In addition, experimental data from xenon-based sources will be presented with a suite of plasma and optical diagnostic instruments, including conversion efficiency.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] EUV laser produced plasma source development for lithography.
    Hayden, P
    Sheridan, P
    O'Sullivan, G
    Dunne, P
    Gaynor, L
    Murphy, N
    Cummings, A
    OPTO-IRELAND 2005: OPTICAL SENSING AND SPECTROSCOPY, 2005, 5826 : 154 - 164
  • [32] Gas discharged based radiation source for EUV-lithography
    Lebert, R.
    Bergmann, K.
    Schriever, G.
    Neff, W.
    Microelectronic Engineering, 1999, 46 (01): : 449 - 452
  • [33] A gas discharged based radiation source for EUV-lithography
    Lebert, R
    Bergmann, K
    Schriever, G
    Neff, W
    MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 449 - 452
  • [34] Evolution of light source technology to support immersion and EUV lithography
    Blumenstock, GM
    Meinert, C
    Farrar, NR
    Yen, A
    Advanced Microlithography Technologies, 2005, 5645 : 188 - 195
  • [35] Xenon discharge produced plasma radiation source for EUV lithography
    Zhang, CH
    Katsuki, S
    Horta, H
    Imamura, I
    Kondo, Y
    Namihira, T
    Akiyama, H
    Conference Record of the 2005 IEEE Industry Applications Conference, Vols 1-4, 2005, : 2320 - 2323
  • [36] High power laser plasma EUV light source for lithography
    Endo, A
    HIGH-POWER LASER ABLATION V, PTS 1 AND 2, 2004, 5448 : 704 - 711
  • [37] Effect of Source Pupil Shape on Process Windows in EUV Lithography
    Kuo, Hung-Fei
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2014, 13 (01) : 136 - 142
  • [38] Impact of source pupil shapes on process windows in EUV lithography
    Kuo, Hung-Fei
    PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC), 2013, : 124 - 127
  • [39] Compact EUV source and optics for applications apart from lithography
    Bayer, Armin
    Barkusky, Frank
    Peth, Christian
    Toettger, Holger
    Mann, Klaus
    ADVANCES IN X-RAY/EUV OPTICS, COMPONENTS, AND APPLICATIONS, 2006, 6317
  • [40] High Performance Next Generation EUV Lithography Light Source
    Choi, Peter
    Zakharov, Sergey V.
    Aliaga-Rossel, Raul
    Benali, Otman
    Duffy, Grainne
    Sarroukh, Ouassima
    Wyndham, Edmund
    Zakharov, Vasily S.
    ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES, 2009, 7271