1/f noise in single-walled carbon nanotube devices

被引：123

作者：

Snow, ES ^{[1
]}

Novak, JP ^{[1
]}

Lay, MD ^{[1
]}

Perkins, FK ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1812838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the scaling behavior of 1/f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1/f noise and find that for devices of a given resistance the noise scales inversely with device size. We have established an empirical formula that describes this behavior over a wide range of device parameters that can be used to assess the noise characteristics of carbon nanotube-based electronic devices and sensors. (C) 2004 American Institute of Physics.

引用

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页码：4172 / 4174

页数：3

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