Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology

被引：10

作者：

Shabanpour, R. ^{[1
]}

Meister, T. ^{[1
]}

Ishida, K. ^{[1
]}

Kheradmand-Boroujeni, B. ^{[1
]}

Carta, C. ^{[1
]}

Ellinger, F. ^{[1
]}

Petti, L. ^{[2
,3
]}

Muenzenrieder, N. ^{[2
,3
]}

Salvatore, G. A. ^{[2
,3
]}

Troester, G. ^{[2
,3
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01062 Dresden, Germany

[2] Swiss Fed Inst Technol, Elect Lab, Zurich, Switzerland

[3] Swiss Fed Inst Technol, Wearable Comp Grp, Zurich, Switzerland

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2016年 / 87卷 / 02期

关键词：

Analog circuits; Amplifiers; High gain amplifiers; Thin film transistors; a-IGZO; Flexible electronics; SILICON; MODEL;

D O I：

10.1007/s10470-015-0655-3

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc power of 2.32 mW. The chip areas of the amplifiers are 7.5 and 10.3 mm(2), respectively. By using a gain-enhancement technique in the first amplifier, gain, dc power consumption, and chip area are greatly improved. The presented amplifiers are designed for using as audio pre-amplifiers in a radio receiver. The presented measurements confirm that the amplifiers meet the requirements for this purpose. The circuits are designed using the Verilog-A Rensselaer Polytechnic Institute-amorphous TFT model; circuit simulations are also presented for comparison with the hardware characterization. Additionally, the impact of process variations on the amplifiers is analyzed and discussed in details.

引用

页码：213 / 222

页数：10

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